SD5000N PDIP 16L ROHS 数据手册
SD5000/5001/5400/5401
Quad N-Channel Lateral DMOS Switch, Zener Protected
Product Summary
Part Number
V(BR)DS Min (V)
rDS(on) Max (Ω)
Crss Max (pF)
tON Max (ns)
SD5000I
20
VGS(th) Max (V)
1.5
70 @ VGS = 5 V
0.5
2
SD5000N
20
1.5
70 @ VGS = 5 V
0.5
2
SD5001N
10
1.5
70 @ VGS = 5 V
0.5
2
SD5400CY
20
1.5
75 @ VGS = 5 V
0.5
2
SD5401CY
10
1.5
75 @ VGS = 5 V
0.5
2
Features
Benefits
Applications
•
•
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Quad SPST Switch with Zener Input Protection
Low Interelectrode Capacitance and Leakage
Ultra-High Speed Switching―tON: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed rDS @5 V
Low Turn-On Threshold Voltage
High-Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
Video Switch
Multiplexer
DAC Deglitchers
High-Speed Driver
Description
The SD5000/5400 series of monolithic switches features four
individual double-diffused enhancement-mode MOSFETs built on a
common substrate. These bidirectional devices provide low onresistance and low interelectrode capacitances to minimize
insertion loss and crosstalk.
ultra-fast switching speeds. For manufacturing reliability, these
devices feature poly-silicon gates protected by Zener diodes
Built on Siliconix’ proprietary DMOS process, the SD5000/5400
series utilizes lateral construction to achieve low capacitance and
For similar products packaged in TO-206AF (TO-72) and TO-253
(SOT-143) see the SD211DE/SST211 series.
Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401
The SD 5000/5400 are rated to handle ±10-V analog signals, while
the SD5001/5401 are rated for ±5-V signals.
www.linearsystems.com
Page 1 of 4
SD5000/5001/5400/5401
Quad N-Channel Lateral DMOS Switch, Zener Protected
Absolute Maximum Ratings (TA = 25ºC Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage
(SD5000, SD5400)………………………………………..…….……………+30V/-25V
(SD5001, SD5401)………………………………………..…………….……+25V/-15V
Gate-Substrate Voltage
(SD5000, SD5400)……..……+30V/-0.3V
(SD5001I, SD5401).....….…+25V/-0.3V
Drain-Source Voltage
(SD5000, SD5400)………………..…….20V
(SD5001I, SD5401)……………….…….10V
Drain-Source-Substrate Voltage (SD5000, SD5400)…….….……….25V
(SD5001I, SD5401)………………….….15V
Drain Current………………………………………………………………….….…...........50 mA
Lead Temperature (1/16” from case for 10 seconds)……………………….300ºC
Storage Temperature…………………………………………………….….…..-65 to 150ºC
Operating Junction Temperature…..………………………………….…..-55 to 150ºC
Power Dissipation”:
(Package)……………………..……………….………500 mW
(each Device)…..…………………………….………300 mW
Notes:
a. SD5000/SD5001I derate 5 mW/C above 25ºC
b. SD5400/SD5401 derate 4 mW/C above 25ºC
Specificationsa
SD5000
SD5400
Parameter
Symbolb
Test Conditionsb
Typc
Min
Limits
SD5001
SD5401
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DS
VGS=VBS=-5V, ID=10nA
30
20
10
Source-Drain Breakdown Voltage
V(BR)SD
VGD=VBD=-5V, IS=10nA
22
20
10
Drain-Substrate Breakdown Voltage
V(BR)DBO
VGB=0 V, ID=10µA, Source Open
35
25
15
Source-Substrate
Breakdown Voltage
V(BR)SBO
VGB=0 V, IS=10µA, Drain Open
35
25
15
Drain-Source Leakage
IDS(off)
Source-Drain Leakage
ISD(off)
Gate Leakage
IGBS
Threshold Voltage
VGS(th)
VGS= VBS=-5 V
VGD= VBD=-5 V
VDS= 10 V
0.4
VDS= 15 V
0.7
VDS= 20 V
0.9
VSD= 10 V
0.5
VSD= 15 V
0.8
VSD= 20 V
Drain-Source On-Resistance
Resistance Match
rDS(on)
V
10
10
10
1
10
VDB = VSB = 0 V, VGB =30V
0.01
100
100
VDS = VGS, ID = I µA, VSB =0V
0.8
1.5
1.5
58
70
70
60
75
75
SD5000 Series
VGS = 5 V
SD5400 Series
VGS = 5 V
VSB = 0 V
ID = 1 mA
∆rDS(on)
VGS = 10 V
38
VGS = 15 V
30
VGS = 20 V
26
VGS = 5 V
1
SD5000 Series
12
10
10
SD5400 Series
11
9
9
nA
V
Ω
5
5
Dynamic
Forward Transconductance
Gate Node Capacitance
gfs
VDS = 10 V
VSB = 0 V
lD = 20 mA
f = 1 kHz
mS
C(GS+GD+GB)
Drain Node Capacitance
C(GD+DB)
Source Node Capacitance
C(GS+SB)
Reverse Transfer Capacitance
Crosstalk
Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401
VDS = 10 V
f = 1 MHz
VGS = VBS = -15V
Crss
f = 3 kHz
www.linearsystems.com
SD5000 Series
2.5
3.5
3.5
2.0
3
3
3.7
5
5
0.2
0.5
0.5
-107
pF
dB
Page 2 of 4
SD5000/5001/5400/5401
Quad N-Channel Lateral DMOS Switch, Zener Protected
Specificationsa
SD5000
SD5400
Parameter
Symbolb
Test Conditionsb
Typc
Min
Limits
SD5001
SD5401
Max
Min
Max
Unit
Switching
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
VSB= 1-5 Vin, VGN 0 to 5 V, RG = 25 Ω
VDD = 5 V, RL = 680 Ω
tf
0.5
1
1
0.6
1
1
2
ns
6
DMCA
.
Switching Time Test Circuit
VIN
High
Low
Switch (On/Off)
On
Off
VOUT
GND
VDD
Notes:
a. TA = 25ºC unless otherwise noted.
b. B is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for
its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401
www.linearsystems.com
Page 3 of 4
SD5000/5001/5400/5401
Quad N-Channel Lateral DMOS Switch, Zener Protected
Package Dimensions:
SOIC 14 Lead Narrow Body Plastic Package
S/B (Side Braze) DIP 16 Lead Dual In Line Package
Ordering Information:
PDIP 16 Lead Dual In Line Plastic Package
Standard Part Call-Out
SD5000N PDIP 16L RoHS
SD5001N PDIP 16L RoHS
SD5000I S/B DIP 16L RoHS
SD5400CY SOIC 14L RoHS
SD5401CY SOIC 14L RoHS
Custom Part Call-Out
(Custom Parts Include SEL + 4 Digit Numeric Code)
SD5000N PDIP 16L RoHS SELXXXX
SD5001N PDIP 16L RoHS SELXXXX
SD5000I S/B DIP 16L RoHS SELXXXX
SD5400CY SOIC 14L RoHS SELXXXX
SD5401CY SOIC 14L RoHS SELXXXX
Doc 20113 09/02/2022 Rev# A12 ECN# SD5000/5001/5400/5401
www.linearsystems.com
Page 4 of 4
SD5000N PDIP 16L ROHS 价格&库存
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